5SHY3545L0O20 3BHEO14105RO001IGCT(Intergrated Gate Commutated Thyristors) is a new type of power semiconductor device used in large power electronics kits introduced in 1996. IGCT is a new type of high-power semiconductor switching device based on GTO structure, which uses integrated gate structure for hard drive, buffer layer structure and transparent anode emitter technology. It has the on-state characteristics of thyristor and the switching characteristics of transistor. Due to the use of buffer structure and shallow emitter technology, the dynamic loss is reduced by about 50%, in addition, such devices are also integrated on a chip with good dynamic characteristics of the continuous current diode, so that in its unique way to achieve the low on-state voltage drop, high blocking voltage and transistor stable switching characteristics of the organic combination.
5SH3545L0020 3BHE014105RO01 IGCT has made great progress in terms of power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronics complete sets of devices. IGCT integrates the GTO chip with the anti-parallel diode and the gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, giving play to the performance of the thyristor in the on-stage, and presenting the characteristics of the transistor in the off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost, high yield, and has a good application prospect. GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage than IGBT using transistor technology, 5SHY3545L0020 3BHEO14105RO001, but the widely used standard GTO drive technology causes uneven turn-on and turn-off process. The need for high cost dv/dt and di/dt absorption circuits and higher power grid drive units, resulting in reduced reliability, higher prices, and is not conducive to series. However, before the high-power MCT technology is not mature, IGCT has become the preferred solution for high-voltage high-power low-frequency communicators.
