• ABB 5SHY4045L0006 IGCT High-Voltage High-Power Input/Output Module
  • ABB 5SHY4045L0006 IGCT High-Voltage High-Power Input/Output Module

ABB 5SHY4045L0006 IGCT High-Voltage High-Power Input/Output Module

No.5SHY4045L0006
Digital Model :5SHY4045L0006 Manufacturer :ABB
Weight :1Kg Shipping weight :2Kg
Quantity :2
Warranty :1 year Import: Yes sales: nationwide
Shipping time :DHL/FEDEX /EMS/UPS/TNT/EMS
$3888.00
  • ABB 5SHY4045L0006 IGCT High-Voltage High-Power Input/Output Module

Desciption

Digital Model :5SHY4045L0006 Manufacturer :ABB
Weight :1Kg Shipping weight :2Kg
Quantity :2
Warranty :1 year Import: Yes sales: nationwide
Shipping time :DHL/FEDEX /EMS/UPS/TNT/EMS

Product features:
Plug and play
Program debugging
Technical installation
ABB 5SHY4045L0006 3BHBO30310RO001 IGCT series module
IGCT Intergrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a type of power semiconductor switching device developed by a medium voltage inverter for use in large power electronics packages.
Label
Specification
Model Number
6ES7315-2AG10-0AB0
Brand
Siemens
Type
CPU Module (S7-300 Series)
Input Voltage
24V DC (±10%)
Operating Temp
0°C to 60°C (32°F to 140°F)
Communication Method
Profibus DP, MPI
Mounting
DIN Rail (35mm)
Weight
0.38 kg (0.84 lbs)
Certifications
CE, UL, CSA, ATEX
Dimensions
125mm × 80mm × 62.5mm (H×W×D)
IP Rating
IP20 (Protected against solid objects ≥12mm)
Protocols Supported
Profibus DP V1, MPI, PPI
Memory
256KB Work Memory (128KB Code / 128KB Data)
Expansion Slots
4 (for S7-300 I/O Modules)

It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets.
Product Overview:
IGCT integrates the GTO chip with the anti-parallel diode and gate driver circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor.
The performance of thyristor is displayed in the on-stage, and the characteristics of transistor are displayed in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect.
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